(China (Mainland))
Product Summary
The 2N6284 is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. The 2N6284 is inteded for general purpose amplifier and low frequency switching applications. It is used in linear and switching industrial equipment.
Parametrics
2N6284 absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 100 V; (2)VCEO Collector-Emitter Voltage (IB = 0): 100 V; (3)VEBO Emitter-Base Voltage (IC = 0): 5 V; (4)IC Collector Current: 20 A; (5)ICM Collector Peak Current: 40 A; (6)IB Base Current: 0.5 A; (7)Ptot Total Dissipation at Tc ≤ 25 ℃: 160 W; (8)Tstg Storage Temperature: -65 to 200 ℃; (9)Tj Max. Operating Junction Temperature: 200 ℃.
Features
2N6284 features: (1)Stmicroelectronics preferred salestypes; (2)Complementary pnp - NPN devices; (3)Integrated antiparallel collector-emitter diode.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2N6284 |
STMicroelectronics |
Transistors Darlington NPN Darlington Sw |
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2N6284G |
ON Semiconductor |
Transistors Darlington 20A 100V Bipolar Power NPN |
Data Sheet |
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